Capacitor for semiconductor memory device and method of...

Details Capacitor for semiconductor memory device and method of... Capacitor for semiconductor memory device and method of...

2003-04-28

2004-06-08

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S396000, C438S240000, C438S681000, C438S685000, C438S790000, C438S786000, C438S778000

Reexamination Certificate

active

06746931

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a capacitor for semiconductor memory device and a method of manufacturing the same, and more particularly to a capacitor for semiconductor memory device capable of increasing storage capacitance and preventing leakage current and method of manufacturing the same.
BACKGROUND OF THE INVENTION
Along with the recent progress in the semiconductor manufacturing technology, the demand for memory device has increased dramatically. Consequently, a memory device having higher capacitance per small dimension is required. Capacitance of the capacitor is increased by using an insulator having high dielectric constant or enlarging the surface area of a lower electrode. Those conventional capacitors have been made with tantalum-oxide (Ta
2
O
5
) layer having a dielectric constant higher than that of nitride-oxide (NO) layer, thereby forming the lower electrode having 3-Dimensional structure.
FIG. 1
is a cross-sectional view of a capacitor in a conventional semiconductor memory device. Referring to
FIG. 1
, a field oxide layer
11
is also formed at a predetermined portion of the substrate
10
. A gate electrode
13
including a gate insulating layer
12
at a lower portion thereof is formed by a known technique at a predetermined portion of a semiconductor substrate
10
. A junction region
14
is formed on the semiconductor substrate
10
at each end of the gate electrode
13
, thereby forming a MOS transistor. A first interlevel insulating layer
16
and a second interlevel insulating layer
18
are formed on the semiconductor substrate
10
. A storage-node contact hole h is formed in the first and the second interlevel insulating layers
16
,
18
so that the junction region
14
is exposed. A cylinder type lower electrode
20
is formed by a known technology with in the storage-node contact hole h to contact the exposed junction region
14
. A HSG (hemi-spherical grain) layer
21
is formed on a surface of the lower electrode
20
in order to increase the surface area of the lower substrate
20
. A Ta
2
O
5
layer
23
is formed on the surface of the HSG layer
21
. At this time, the Ta
2
O
5
layer
23
is formed as follows. First, a surface of the HSG layer
21
is cleaned before the Ta
2
O
5
layer
23
is formed, and then the RTN (rapid thermal nitridation) process is performed ex situ thereby forming a silicon-nitride layer
22
on the HSG layer
21
. Next, a first Ta
2
O
5
layer is formed at temperature of approximately 400-450° C. with thickness of 53-57 Å. Afterward, an annealing process is performed at low temperature, and then there is formed a second Ta
2
O
5
layer with the same thickness and by the same process as in the first Ta
2
O
5
layer. Annealing processes at low temperature and at high temperature are continued in series thereby forming a single Ta
2
O
5
layer
23
. An upper electrode
24
is deposited on upper portions of the Ta
2
O
5
layer
23
and the second interlevel insulating layer
18
, thereby completing the formation of a capacitor.
However, the conventional capacitor according to the above method using the Ta
2
O
5
layer as a dielectric layer has the following problems.
First, a difference in the composition rate of Ta and O results since Ta
2
O
5
generally has unstable stoichiometry. As a result, substitutional Ta atoms, i.e. vacancy atoms, are generated in the Ta
2
O
5
layer. Since those vacancy atoms are oxygen vacancy, leakage current result. The amount of vacancy atoms in the dielectric layer can be controlled depending on the contents and the bond strength of components in the Ta
2
O
5
layer; however, it is difficult to eliminate them completely.
In order to stabilize the unstable stoichiometry of Ta
2
O
5
, the Ta
2
O
5
layer is oxidized so as to remove the substitutional Ta atoms in the Ta
2
O
5
layer. However, when the layer is oxidized, an oxide layer having low dielectric constant is formed at an interface between the Ta
2
O
5
layer and the lower electrode or the Ta
2
O
5
layer and the upper electrode since Ta
2
O
5
easily oxidizes with the lower and the upper electrode made of polysilicon or TiN., thereby degrading the homogeneity of the interface.
Further, due to the reaction between an organic substance such as Ta(OC
2
H
5
)
5
used as a precursor and O
2
(or N
2
O) gas as a reaction gas, impurities result, such as carbon atoms C, carbon compounds(CH
4
, C
2
H
4
) and H
2
O in the Ta
2
O
5
layer. These impurities increase leakage current in the capacitor and degrade the dielectric characteristics of the Ta
2
O
5
layer. Accordingly, a capacitor having a large capacitance is difficult to obtain.
Moreover, the use of the Ta
2
O
5
layer as a dielectric layer generates extra ex-situ steps, one before formation of Ta
2
O
5
layer and one after the cleaning step. Also, two thermal processes, at low and high temperatures, preferably is performed after the Ta
2
O
5
layer has been formed. Therefore, forming a dielectric layer with Ta
2
O
5
using the conventional method is cumbersome.
SUMMARY OF THE INVENTION
Accordingly, it is one object of the present invention to provide a capacitor for semiconductor device capable of obtaining a great capacitance by providing a dielectric layer having low leakage current and high dielectric constant.
Furthermore, the other object of the present invention is to provide a method of manufacturing capacitor for semiconductor device capable of simplifying its manufacturing process.
According to one aspect of the present invention, a capacitor for semiconductor memory device includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline Ta
x
O
y
N
z
layer, and the total of x, y, and z in the crystalline Ta
x
O
y
N
z
layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.
In another aspect of the present invention, a method of manufacturing a capacitor on a semiconductor substrate includes the steps of: forming a lower electrode on the semiconductor substrate; depositing an amorphous Ta
x
O
y
N
2
layer as a dielectric layer on the lower electrode; crystallizing the amorphous Ta
x
O
y
N
z
layer; and forming an upper electrode on the crystalline Ta
x
O
y
N
z
layer, wherein the total of x, y and z in the Ta
x
O
y
N
z
layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.
Still other aspect of the present invention, a method of manufacturing a capacitor on a semiconductor substrate includes the steps of: forming a lower electrode on the semiconductor substrate; surface-treating to prevent a natural oxide layer generation on the surface of the lower electrode; depositing an amorphous Ta
x
O
y
N
z
layer as a dielectric layer on the lower electrode; crystallizing the amorphous Ta
x
O
y
N
z
layer; and forming an upper electrode on the crystalline Ta
x
O
y
N
z
layer, wherein the total of x, y and z in the Ta
x
O
y
N
z
layer is 1, y is 0.3 to 0.5, and z is 0.1 to 0.3, and the amorphous Ta
x
O
y
N
z
layer is obtained by supplying Ta chemical vapor obtained from a precursor, O
2
gas and NH
3
gas with pressure of 0.1 to 100 Torr at temperature of 300 to 600° C. in an LPCVD chamber and by a surface chemical reaction thereof.
Herein, O
2
gas is supplied by 50 to 150 sccm and NH
3
is supplied by 30 to 70 sccm.


REFERENCES:
patent: 4130694 (1978-12-01), Glass et al.
patent: 5352623 (1994-10-01), Kamiyama
patent: 5452178 (1995-09-01), Emesh et al.
patent: 5631188 (1997-05-01), Chang et al.
patent: 5677015 (1997-10-01), Hasegawa
patent: 5741721 (1998-04-01), Stevens
patent: 5753945 (1998-05-01), Chivukula et al.
patent: 5837576 (1998-11-01), Chen et al.
patent: 5977582 (1999-11-01), Fleming et al.
patent: 6077715 (2000-06-01), Chivukula et al.
patent: 6180542 (2001-01-01), Hwang
patent: 6338995 (2002-01-01), Hwang et al.
patent: 6576528 (2003-06-01), Lee et al.
patent: 62-136035 (1987-06-01), None
patent: 63-038248 (1988-02-01), None
patent: 01-173622 (1989-07-01), None
patent: 02-226754 (1990-09-01), None
paten

Affiliated with

Also associated with

Rating

Capacitor for semiconductor memory device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor for semiconductor memory device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor for semiconductor memory device and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3342737