Capacitor for an integrated circuit and method of formation ther

Details Capacitor for an integrated circuit and method of formation ther Capacitor for an integrated circuit and method of formation ther

1994-11-28

1996-10-08

Picard, Leo P.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613061, 361311, 361312, 361313, 257295, 257296, 257303, 257306, 257310, 437 60, H01G 430

Patent

active

055637620

ABSTRACT:
A capacitor structure and method of forming a capacitor structure for an integrated circuit is provided. The capacitor structure, comprising a bottom electrode, capacitor dielectric and top electrode, is formed on a passivation layer overlying the interconnect metallization. The capacitor electrodes are interconnected to the underlying integrated circuit from underneath, through conductive vias, to the underlying interconnect metallization. The method provides for adding capacitors to an otherwise completed and passivated integrated circuit. The structure is particularly applicable for ferroelectric capacitors. The passivation layer acts as a barrier layer for a ferroelectric dielectric. Large area on-chip capacitors may added without affecting the interconnect routing or packing density of the underlying devices, and may be added almost independently of the process technology used formation of the underlying integrated circuit.

REFERENCES:
patent: 4149301 (1979-04-01), Cook
patent: 5055906 (1991-10-01), Mase et al.
IEEE Electron Device Letters, vol. 14, No. 7, 1 Jul. 1993, pp. 320-322, XP 000382279 LIU W T et al "Low-Temperature Fabrication of Amorphous BATIO3 Thin-Film Bypass Capacitors".

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