Capacitor for a semiconductor device

Details Capacitor for a semiconductor device Capacitor for a semiconductor device

1996-03-13

1998-03-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257535, 257277, 257296, 257307, 257350, 257758, H01L 2314, H01L 2702, H01L 2976

Patent

active

057264856

ABSTRACT:
A semiconductor device comprises a substrate such as a semiconductor wafer having a major surface, a first conductive layer formed over the major surface, and a second conductive layer formed over the first conductive layer with the first and second conductive layers having a capacitance therebetween. A semiconductor layer is formed over the first and second conductive layer, the semiconductor layer having a diffusion region such as a transistor source, drain, and/or channel. An inventive method for forming the inventive structure comprises the steps of forming a first conductive layer over a substrate and forming a second conductive layer over the first conductive layer. Next, a semiconductor layer is formed over the second conductive layer and a transistor diffusion region, such as a source, drain, and/or channel is formed in the semiconductor layer.

REFERENCES:
patent: 4879631 (1989-11-01), Johnson et al.
patent: 5032892 (1991-07-01), Chern et al.
patent: 5083184 (1992-01-01), Eguchi
patent: 5084746 (1992-01-01), Arimoto et al.
patent: 5155656 (1992-10-01), Narashimhan et al.
patent: 5266821 (1993-11-01), Chern et al.
patent: 5304506 (1994-04-01), Porter et al.
patent: 5329237 (1994-07-01), Horch
patent: 5485029 (1996-01-01), Crabb et al.
patent: 5519243 (1996-05-01), Kikuda et al.
Technology Advances Electronic Design Oct. 13, 1995.

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