Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-07-26
2005-07-26
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S315000, C257S510000, C438S393000
Reexamination Certificate
active
06921960
ABSTRACT:
A semiconductor device includes a structure in which a first electrode layer, an inter-electrode insulating film and a second electrode layer are laminated in a main circuit in this order, and includes a capacitor element having a lower electrode formed of the same layer as the first electrode layer, a charge storage layer formed of the same layer as the inter-electrode insulating film, and an upper electrode formed of the second electrode layer. The semiconductor device further includes an opening portion formed in the charge storage layer, the opening portion having a bottom to which the lower electrode is exposed, and a first region electrically connected to the lower electrode via the opening portion and electrically isolated from the upper electrode, the first region being formed of the same layer as the second electrode layer.
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Ichige Masayuki
Sato Atsuhiro
Shirota Riichiro
Sugimae Kikuko
Takeuchi Yuji
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Weiss Howard
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