Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-01-18
2011-01-18
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S769000, C257SE29143, C257SE29343
Reexamination Certificate
active
07872328
ABSTRACT:
A capacitor electrode includes a first surface and a second surface which are arranged opposite each other. The capacitor electrode contains an oxygen atom and a nitrogen atom. The capacitor electrode includes a position A where the oxygen atom exhibits a largest concentration value, between the first surface and the second surface in a thickness direction. The nitrogen atom is present only in an area closer to the first surface than the position A.
REFERENCES:
patent: 5520992 (1996-05-01), Douglas et al.
patent: 6833576 (2004-12-01), Agarwal et al.
C.M. Chu et al., Cylindrical Ru / SrTi03/ Ru Capacitor Technology for 0.11 μm Generation DRAMs, 2001 Symposium on VLSI Technology Digest of Technical Papers.
Elpida Memory Inc.
Smoot Stephen W
Young & Thompson
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