Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2006-08-15
2006-08-15
Dinkins, Anthony (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S306300, C361S301400
Reexamination Certificate
active
07092233
ABSTRACT:
An improved capacitor that is less susceptible to the depletion effect and methods for providing the same. The capacitor comprises a first and second electrode and an insulating layer interposed therebetween. The first electrode includes a bulk layer comprising n-doped polysilicon. The first electrode also includes an interface layer extending from a first surface of the bulk layer to the insulating layer. The interface layer is heavily doped with phosphorus so that the depletion region of the first electrode is confined substantially within the interface layer. The method of forming the interface layer comprises depositing a layer of hexamethldisilazane (HMDS) material over the first surface of the bulk layer so that HMDS molecules of the HMDS material chemically bond to the first surface of the bulk layer. The method further comprises annealing the layer of HMDS material in a phosphine ambient so as to replace CH3methyl groups with PH3molecules. The interface layer is then passivated in a nitrogen ambient having a reduced temperature so as to reduce the number of dangling silicon bonds of the lower electrode in a manner that results in reduced thermal damage to neighboring circuit elements.
REFERENCES:
patent: 5032545 (1991-07-01), Doan et al.
patent: 5438012 (1995-08-01), Kamiyama
patent: 5639685 (1997-06-01), Zahurak et al.
patent: 5663088 (1997-09-01), Sandhu et al.
patent: 5712182 (1998-01-01), Madan
patent: 5759262 (1998-06-01), Weimer et al.
patent: 5763922 (1998-06-01), Chau
patent: 5882979 (1999-03-01), Ping et al.
patent: 5933727 (1999-08-01), Figura
patent: 6027970 (2000-02-01), Sharan et al.
patent: 6124161 (2000-09-01), Chern et al.
patent: 6228737 (2001-05-01), Inoue
patent: 6350648 (2002-02-01), Ping et al.
patent: 6373112 (2002-04-01), Murthy et al.
patent: 6503805 (2003-01-01), Wang et al.
Y. Ohji et al., Ta2O5 Capacitors Dielectric Material for Giga-bit DRAMs. IEDM 1995, pp. 111-114.
S. Kamiyama et al., Ultra Thin TiN/Ta2O5/W Capacitor Technology for 1GBit DRAM. IEDM 1993, pp. 49-52.
Q. Lu et al., Leakage Current Comparison Between Ultra-Thin Ta2O5 Films and Conventional Gate Dielectrics. IEEE 1998, pp. 341-342.
Hamada, et al., A High Performance 0.18-μm Merged DRAM/Logic Technology Featuring 0.45-μm2 Stacked Capacitor Cell, 4 pages, 1999.
DeBoer Scott J.
Powell Don C.
Dinkins Anthony
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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