Capacitor dielectrics of silicon-doped amorphous hydrogenated ca

Details Capacitor dielectrics of silicon-doped amorphous hydrogenated ca Capacitor dielectrics of silicon-doped amorphous hydrogenated ca

1995-01-23

1996-10-29

King, Roy V.

Coating processes

Electrical product produced

Condenser or capacitor

427 79, 427577, 427578, 427580, 4272557, 437919, 20419222, B05D 512, B05D 306, H05H 124

Patent

active

055694870

ABSTRACT:
Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.

REFERENCES:
patent: 4636833 (1987-01-01), Nishioka et al.
patent: 5249554 (1993-10-01), Tamor et al.
patent: 5266409 (1993-11-01), Schmidt et al.
patent: 5275967 (1994-01-01), Taniguchi et al.
Demichelis et al., Materials Science and Engineering, B11, pp. 313-316 (1992).
El Khakani et al., J. Appl. Phys., 74, pp. 2834-2840 (1993).

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