Capacitor constructions and semiconductor processing method of f

Details Capacitor constructions and semiconductor processing method of f Capacitor constructions and semiconductor processing method of f

1998-06-03

2000-10-31

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613214, 3613215, 257306, 257310, H01G 406

Patent

active

06141204&

ABSTRACT:
A capacitor construction includes, i) a dense mass of electrically insulative oxide; ii) an electrically conductive inner capacitor plate overlying and contacting the electrically insulative oxide mass; iii) a capacitor dielectric layer overlying the inner capacitor plate and oxide mass, the capacitor dielectric layer comprising a nitride; iv) an electrically conductive outer capacitor plate overlying the capacitor dielectric layer; and v) the dense mass of electrically insulative oxide contacting the inner capacitor plate being characterized by a wet etch rate of less than or equal to about 75 Angstroms/minute in a 100:1 by volume H.sub.2 O:HF solution.

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Kaga, T. et al., "A 0.29-vm.sup.2 MIM-CROWN Cell and Process Technologies for 1-Gigabit DRAMS", IEDM1994, PP. 927-929.

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