Capacitor compatible with high dielectric constant materials hav

Details Capacitor compatible with high dielectric constant materials hav Capacitor compatible with high dielectric constant materials hav

1993-08-10

1995-02-21

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361303, 361311, 361313, 3613211, 257306, 257310, H01G 101

Patent

active

053921895

ABSTRACT:
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide
itride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. The barrier layer is then formed in the recess. The process is continued with a formation of a second insulative layer, a potion of which is removed to form an opening exposing a portion of the barrier layer. An oxidation resistant conductive layer is deposited in the recess and forms at least a portion the storage node electrode of the capacitor. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5111355 (1992-05-01), Anand et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5198384 (1993-03-01), Dennison
patent: 5248628 (1993-09-01), Okabe et al.
patent: 5340765 (1994-08-01), Dennison et al.

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