Capacitor compatible with high dielectric constant materials hav

Details Capacitor compatible with high dielectric constant materials hav Capacitor compatible with high dielectric constant materials hav

1993-08-10

1995-01-10

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361303, 361311, 361313, 3613211, 257306, 257310, H01G 101

Patent

active

053813022

ABSTRACT:
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide
itride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. Titanium is deposited and a rapid thermal anneal is performed. The titanium reacts with silicide of the conductive plug to form TiSi at the bottom of the recess. Unreacted Ti is removed. The barrier layer is then formed in the recess. The process is continued with a formation of an oxidation resistant conductive layer and the patterning thereof to complete the formation of the storage node electrode. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5111355 (1992-05-01), Anand et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5198384 (1993-03-01), Dennison
patent: 5248628 (1993-09-01), Okabe et al.

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