Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-01-30
2007-01-30
Lebentritt, Michael (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C257SE21479
Reexamination Certificate
active
11031764
ABSTRACT:
In a capacitor10, a first electrode21, a dielectric layer23, a solid electrolytic layer50and a second electrode31are provided. In a manufacturing process, the dielectric layer23and a first solid electrolytic layer24formed by a chemical polymerization film are provided on the first electrode21side, while a second solid electrolytic layer32formed by an electrolytic polymerization film is provided on the second electrode31side. Then, the solid electrolytic layers are bonded to each other.
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patent: 64-32621 (1989-02-01), None
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Higashi Mitsutoshi
Mochizuki Takashi
Sakaguchi Hideaki
Lebentritt Michael
Lee Cheung
Rankin, Hill Porter & Clark LLP
Shinko Electric Industries Co. Ltd.
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