Capacitor, circuit board, method of formation of capacitor,...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C438S239000, C438S240000, C438S957000, C029S025030, C257SE21010

Reexamination Certificate

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11068884

ABSTRACT:
A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.

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patent: 6882520 (2005-04-01), Kamigawa et al.
patent: 6919240 (2005-07-01), Uzawa et al.

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