Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2007-02-13
2007-02-13
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S239000, C438S240000, C438S957000, C029S025030, C257SE21010
Reexamination Certificate
active
11068884
ABSTRACT:
A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.
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Higashi Mitsutoshi
Koike Hiroko
Mochizuki Takashi
Fourson George
Pham Thanh V.
Shinko Electric Industries Co. Ltd.
Staas & Halsey , LLP
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