Capacitor cell, semiconductor device and process for...

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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Details

C361S302000, C361S305000, C361S328000, C361S306200, C361S330000, C365S149000, C365S230010, C365S189090

Reexamination Certificate

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07492569

ABSTRACT:
A capacitor cell for reducing noise in a high drive cell includes a plurality of vias for supplying power to an interconnection layer positioned over the capacitor cell from an upper interconnection layer, so that the resistance of the power supply path is reduced.

REFERENCES:
patent: 5029128 (1991-07-01), Toda
patent: 5439840 (1995-08-01), Jones et al.
patent: 5471418 (1995-11-01), Tanigawa
patent: 5801412 (1998-09-01), Tobita
patent: 6680501 (2004-01-01), Ito et al.
patent: 6756652 (2004-06-01), Yano et al.
patent: 6785157 (2004-08-01), Arimoto et al.
patent: 7161792 (2007-01-01), Sakurabayashi et al.
patent: 6-236923 (1994-08-01), None
patent: 11-191611 (1999-07-01), None
patent: 2000-332201 (2000-11-01), None
patent: 2002-313929 (2002-10-01), None
patent: 2003-86699 (2003-03-01), None

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