Capacitor cell for use in a semiconductor memory integrated circ

Details Capacitor cell for use in a semiconductor memory integrated circ Capacitor cell for use in a semiconductor memory integrated circ

1990-07-02

1991-12-24

James, Andrew J.

357 49, 357 51, 357 55, H01L 2968, H01L 2712, H01L 2702, H01L 2906

Patent

active

050757458

ABSTRACT:
In a semiconductor memory integrated circuit device having a stacked capacitor cell, a first plate electrode and a first dielectric film are formed underneath a charge storage electrode, and a second dielectric film and a second plate electrode are formed over the charge storage electrode. The charge storage electrode makes contact with the diffusion region through a contact hole penetrating the first dielectric material. The first and second plate electrodes are connected via a contact hole penetrating the first and second electric films outside the cell area. Since both the upper surface and the lower surface of the charge storage electrode are utilized for the formation of the capacitor, the size of the capacitor can be halved to produce the same capacitance.

REFERENCES:
patent: 4845539 (1989-07-01), Inoue
patent: 4899203 (1990-02-01), Ino
Author unknown, "Improved Signal and Density Dynamic Random-Access Memory", IBM Technical Disclosure Bulletin, vol. 31, No. 3, Aug. 1988, pp. 279-286.

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