Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2005-10-04
2005-10-04
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S701000, C257S702000
Reexamination Certificate
active
06952049
ABSTRACT:
A capacitor-built-in-type printed wiring substrate which can reliably eliminate noise and attain extremely low resistance and low inductance in connections between an IC chip and the capacitor, and a printed wiring substrate and capacitor for use in the same. A capacitor-built-in-type printed wiring substrate100on which an IC chip is mounted includes a capacitor-built-in-type printed wiring substrate110and an IC chip101mounted on the capacitor-built-in-type printed wiring substrate110. A printed wiring substrate120includes a number of connection-to-IC substrate bumps152and a closed-bottomed capacitor accommodation cavity121formed therein. A capacitor130is disposed in the cavity121and includes a pair of electrode groups133E and133F and a number of connection-to-IC capacitor bumps131connected to either one of the paired electrode groups133E and133F. The connection-to-IC capacitor bumps131are flip-chip-bonded to corresponding connection-to-capacitor bumps103on the IC chip101. The connection-to-IC substrate bumps152are flip-chip-bonded to corresponding connection-to-substrate bumps104on the IC chip101.
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European Search Report for EP 00 30 2581 dated Oct. 14, 2003.
Kodera Eiji
Ogawa Kouki
Ha Nathan W.
NGK Spark Plug Co. Ltd.
Pham Hoai
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