Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-01-26
2008-01-01
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257S296000, C257S297000, C257S300000
Reexamination Certificate
active
07315075
ABSTRACT:
Disclosed is a semiconductor structure that incorporates a capacitor for reducing the soft error rate of a device within the structure. The multi-layer semiconductor structure includes an insulator-filled deep trench isolation structure that is formed through an active silicon layer, a first insulator layer, and a first bulk layer and extends to a second insulator layer. The resulting isolated portion of the first bulk layer defines the first capacitor plate. A portion of the second insulator layer that is adjacent the first capacitor plate functions as the capacitor dielectric. Either the silicon substrate or a portion of a second bulk layer that is isolated by a third insulator layer and another deep trench isolation structure can function as the second capacitor plate. A first capacitor contact couples, either directly or via a wire array, the first capacitor plate to a circuit node of the device in order to increase the critical charge, Qcrit, of the circuit node.
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Aitken John M
Cannon Ethan H.
Oldiges Philip J.
Strong Alvin W.
Canale Anthony
Crane Sara
Gebremariam Samuel A.
Gibb & Rahman, LLC
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