Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-08-30
2011-08-30
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S381000, C438S387000, C257SE21010, C257SE21004, C257SE21008, C257SE21009, C257SE21021, C257SE21257, C257SE21577, C257SE21579
Reexamination Certificate
active
08008161
ABSTRACT:
A method for fabricating a capacitor arrangement which includes at least three electrodes is described. The capacitor arrangement is fabricated using a number of lithography methods that is smaller than the number of electrodes. A capacitor arrangement extending over more than two or more interlayers between metallization layers has a high capacitance per unit area and can be fabricated in a simple way is also described. The circuit arrangement has a high capacitance per unit area and can be fabricated in a simple way. An electrode layer is first patterned using a dry-etching process and residues of the electrode layer are removed using a wet-chemical process, making it possible to fabricate capacitors with excellent electrical properties.
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English Translation of Japanese Office Action Dated Jun. 1, 2009.
European Office Action and English Translation for Serial No. 08 160 938.0—1235, Dated Jul. 8, 2010.
Bachmann Jens
Föste Bernd
Goller Klaus
Kriz Jakob
Infineon - Technologies AG
Jones Eric W
Le Thao X
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