Capacitor assemblies

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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Details

C438S381000, C438S387000, C257SE21010, C257SE21004, C257SE21008, C257SE21009, C257SE21021, C257SE21257, C257SE21577, C257SE21579

Reexamination Certificate

active

08008161

ABSTRACT:
A method for fabricating a capacitor arrangement which includes at least three electrodes is described. The capacitor arrangement is fabricated using a number of lithography methods that is smaller than the number of electrodes. A capacitor arrangement extending over more than two or more interlayers between metallization layers has a high capacitance per unit area and can be fabricated in a simple way is also described. The circuit arrangement has a high capacitance per unit area and can be fabricated in a simple way. An electrode layer is first patterned using a dry-etching process and residues of the electrode layer are removed using a wet-chemical process, making it possible to fabricate capacitors with excellent electrical properties.

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English Translation of Japanese Office Action Dated Jun. 1, 2009.
European Office Action and English Translation for Serial No. 08 160 938.0—1235, Dated Jul. 8, 2010.

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