Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-02-27
2000-11-21
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257300, 257310, 257529, 257530, H01L 2900
Patent
active
061507067
ABSTRACT:
A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.
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Mercaldi Garry A.
Nuttall Michael
Thakur Randhir P. S.
Eckert II George C.
Hardy David
Micro)n Technology, Inc.
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