Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-05-23
2006-05-23
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S534000, C257S632000, C257S761000, C257S763000
Reexamination Certificate
active
07049679
ABSTRACT:
A solid electrolytic capacitor is obtained in which a sintered metal serves as an anode and a silver layer serves as a cathode. A surface of sintered metal made of tantalum or the like and having an open porosity ratio of more than 75% is oxidized so that an oxide film made of tantalum pentoxide or the like is deposited thereon. Cavities of the metal are filled with an electrically conductive material. Then, the metal is wound around a lead wire and made into a desired shape and size. The silver layer is formed on this porous metal body. Because a specific surface area of the sintered metal is large, a large capacity is obtained.
REFERENCES:
patent: 3581159 (1971-05-01), Piper et al.
patent: 3966987 (1976-06-01), Suzuki et al.
patent: 4067736 (1978-01-01), Vartanian
patent: 4648010 (1987-03-01), Naitoh et al.
patent: 4664883 (1987-05-01), Melody et al.
patent: 4864472 (1989-09-01), Yoshimura et al.
patent: 0 286 866 (1988-10-01), None
patent: 63-262833 (1988-10-01), None
patent: 2001-512530 (2001-08-01), None
Igaki Emiko
Kojima Koichi
Kuramitsu Hideki
Nagai Atsuo
Garcia Joannie Adelle
Matsushita Electric - Industrial Co., Ltd.
Wenderoth , Lind & Ponack, L.L.P.
LandOfFree
Capacitor and production method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor and production method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor and production method therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3570632