Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2006-10-17
2006-10-17
Thomas, Eric W. (Department: 2831)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S524000, C361S528000
Reexamination Certificate
active
07122063
ABSTRACT:
A method for producing a capacitor which includes, as one electrode, an electrical conductor having formed on the surface thereof a dielectric layer and, as the other electrode, a semiconductor layer, the method including producing fine electrically defective portions in the dielectric layer and forming the semiconductor layer on the dielectric layer by electrification. The capacitor obtained by the method of the present invention has good capacitance appearance factor, low ESR and is excellent in reliability.
REFERENCES:
patent: 5428500 (1995-06-01), Nishiyama et al.
patent: 6751833 (2004-06-01), Saito et al.
Naito Kazumi
Yabe Shoji
Showa Denko K.K.
Thomas Eric W.
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