Capacitor, and methods for forming a capacitor

Details Capacitor, and methods for forming a capacitor Capacitor, and methods for forming a capacitor

1996-06-26

1998-12-01

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438253, 3613214, H01L 218242

Patent

active

058438300

ABSTRACT:
A method for forming a capacitor includes forming a substrate having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall; forming an oxidation barrier layer over the exposed inner capacitor plate sidewall; forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of the inner capacitor plate sidewall during formation of the capacitor dielectric plate; and forming an outer capacitor plate over the capacitor dielectric plate. A capacitor is further described which includes an inner capacitor plate having at least one sidewall; an oxidation barrier layer positioned in covering relation relative to the at least one sidewall; a capacitor dielectric plate positioned over the inner capacitor plate; and an outer capacitor plate positioned over the capacitor dielectric plate. In the preferred form of the invention, an insulating dielectric layer is positioned on the oxidation barrier layer, the insulating dielectric layer being of a different composition than the oxidation barrier layer.

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