Fishing – trapping – and vermin destroying
Patent
1993-03-22
1997-10-07
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
437238, 437241, 437228, 437919, H01L 2170
Patent
active
056747713
ABSTRACT:
A structure of a capacitor includes a first metal interconnection layer, a dielectric film, and a second metal interconnection layer. The dielectric film is formed on the first metal interconnection layer. The second metal interconnection layer is formed on the dielectric film. The dielectric film is a dielectric film formed by bias-ECR plasma CVD.
REFERENCES:
patent: 4419385 (1983-12-01), Peters
patent: 4839311 (1989-06-01), Riley et al.
patent: 4939099 (1990-07-01), Seacrist et al.
patent: 4997794 (1991-03-01), Josquin et al.
patent: 5006363 (1991-04-01), Fujii et al.
patent: 5013692 (1991-05-01), Ide et al.
patent: 5025741 (1991-06-01), Suwanai et al.
patent: 5057447 (1991-10-01), Paterson
patent: 5089436 (1992-02-01), Hong et al.
patent: 5101251 (1992-03-01), Wakamiya et al.
patent: 5108941 (1992-04-01), Paterson et al.
patent: 5130267 (1992-07-01), Kaya et al.
patent: 5286667 (1994-02-01), Lin et al.
patent: 5312783 (1994-05-01), Takasaki et al.
Wolf, Stanley and Richard Tauber, `Si Proc. for the VLSI ERA`, vol. 1, pp. 529 and 530.
Katsuyuki Machida et al., "SiO.sub.2 planarization technology with biasing and electron cyclotron resonance plasma deposition for submicron interconnections" J. Vac. Sci. Technol. B4(4), Jul./Aug. 1986, pp. 818-821 .
Imai Kazuo
Machida Katsuyuki
Miura Kenji
Ozaki Yoshiharu
Yoshino Hideo
Bowers Jr. Charles L.
Nippon Telegraph and Telephone Corporation
Whipple Matthew
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