Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-06-09
2000-04-04
Bowers, Charles
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
H01L 2120
Patent
active
060460911
ABSTRACT:
An apparatus and process for making a capacitor comprising a first capacitor plate element covered with a spacing material selected for forming a capacitor dielectric. The first capacitor plate element and the spacing material is encased with a second capacitor element. The second capacitor plate element is drawn for reducing the outer diameter thereof. A multiplicity of the capacitor elements are inserted within a second capacitor plate connector. The second capacitor plate connector is drawn for reducing the outer diameter of the metallic tube and for electrically interconnecting the multiplicity of the second capacitor plate elements with the second capacitor plate connector to form a second capacitor plate. The multiplicity of the first capacitor elements are interconnected with a first capacitor plate connector to form a first capacitor plate. The spacing material is replaced with a dielectric material to form the capacitor thereby.
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Kopp Clinton V.
Liberman Michael
Murray Michael C.
Quick Nathaniel R.
Sobolevsky Alexander
Bowers Charles
Thompson Craig
USF Filtration and Seperations Group, Inc.
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