Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-07-24
2007-07-24
Lebentritt, Michael (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S321600, C361S530000, C361S511000, C361S517000, C361S520000, C029S025030, C257SE21008
Reexamination Certificate
active
11523574
ABSTRACT:
A miniature solid electrolytic capacitor is provided, which is suitable for being disposed within an electrically insulating layer, and is connected to other component using an electrically conductive adhesive with a connection resistance at an anode low and with connection reliability improved. Specifically, the electrolytic capacitor includes a valve metal element for an anode10having a capacitor forming part10A and an electrode lead part10B, a dielectric oxide film11formed on the valve element, a solid electrolyte layer12formed on the dielectric oxide film11and a charge collecting element for a cathode13formed on the solid electrolyte layer12, wherein at least one through hole15is formed in the electrode lead part10B so as to expose a core10C of the valve metal element, and an exposed portion10D of the core is used for connecting portion.
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Handa Hiroyuki
Hirano Koichi
Nakatani Seiichi
Yamashita Yoshihisa
Yoshida Tsunenori
Lebentritt Michael
Lee Kyoung
Wenderoth , Lind & Ponack, L.L.P.
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