Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-04-18
2006-04-18
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S301000
Reexamination Certificate
active
07030457
ABSTRACT:
A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.
REFERENCES:
patent: 4017885 (1977-04-01), Kendall et al.
patent: 5291438 (1994-03-01), Witek et al.
patent: 5770484 (1998-06-01), Kleinhenz
patent: 5866452 (1999-02-01), Willer et al.
patent: 6140199 (2000-10-01), Larsson et al.
patent: 6144055 (2000-11-01), Takenaka
patent: 6472702 (2002-10-01), Shen
patent: 2001/0026960 (2001-10-01), Trivedi
patent: 2002/0153590 (2002-10-01), Kunikiyo
patent: 86 03 689.0 (1987-09-01), None
patent: 44 28 195 (1995-04-01), None
patent: 19713052 (1998-10-01), None
patent: 0 283 964 (1988-09-01), None
patent: 0 479 143 (1992-04-01), None
patent: 20011068647 (2001-03-01), None
patent: WO 98/44522 (1998-10-01), None
patent: WO 98/56020 (1998-12-01), None
Ahrens Carsten
Geiselbrechtinger Angelika
Hartung Wolfgang
Herzum Christian
Losehand Reinhard
Ho Tu-Tu
Infineon - Technologies AG
Maginot Moore & Beck
LandOfFree
Capacitor and method for producing a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor and method for producing a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor and method for producing a capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3561899