Capacitor and method for fabricating the same

Details Capacitor and method for fabricating the same Capacitor and method for fabricating the same

2005-09-20

2005-09-20

Chaudhuri, Olik (Department: 2824)

Semiconductor device manufacturing: process

Making passive device

C438S396000

Reexamination Certificate

active

06946356

ABSTRACT:
A method for manufacturing a capacitor in a semiconductor device for securing capacitance without a merging phenomenon during a MPS grain growth process. The manufacturing step begins with a preparation of a substrate. The interlayer dielectric (ILD) layer is formed on the substrate and is etched to form conductive plug. Then, an etch barrier layer and a sacrifice insulating layer are formed on entire surface subsequently. A cylinder typed first electrode is formed over the conductive plug using the sacrifice insulating layer. Thereafter, first meta-stable poly silicon (MPS) grains are formed on inner wall of the first electrode except a bottom region thereof. However, second MPS grains with small sizes can be formed in the bottom region for increasing a storage area of the first electrode. Finally, a dielectric layer and a second electrode are formed on the first electrode subsequently.

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