Capacitor and method for fabricating the same

Details Capacitor and method for fabricating the same Capacitor and method for fabricating the same

2011-01-18

2011-01-18

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

C438S387000, C438S396000, C257S532000

Reexamination Certificate

active

07871889

ABSTRACT:
A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer.

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patent: 2003/0062558 (2003-04-01), Yang et al.
patent: 2006/0234466 (2006-10-01), Jeong et al.
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patent: 100648860 (2006-11-01), None
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Korean Intellectual Property Office, Notice of Preliminary Rejection, Application No. 10-2007-0026087, Feb. 21, 2008.

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