Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-05-27
2008-05-27
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S207000, C257S208000, C257S211000, C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C257S311000, C257S312000, C257S532000, C257S535000
Reexamination Certificate
active
07378739
ABSTRACT:
A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer, and a second conductive layer formed on the first dielectric layer. The second conductive layer is coupled to the polysilicon layer.
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Kim Keum-Nam
Kwak Won-kyu
H.C. Park & Associates PLC
Samsung SDI & Co., Ltd.
Soward Ida M.
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