Capacitor and its manufacturing method, and semiconductor...

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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C438S003000, C438S240000, C438S381000, C438S396000, C438S782000, C438S785000, C257SE21009

Reexamination Certificate

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11046654

ABSTRACT:
A method is provided for manufacturing a capacitor including the steps of forming a lower electrode on a substrate, forming an insulation film formed of a perovskite type metal oxide on the lower electrode, and forming an upper electrode on the insulation film. The step of forming the insulation film includes the steps of coating a dispersion liquid in which fine crystal powder of a second metal oxide of a perovskite type in a liquid containing a precursor compound of a first metal oxide of a perovskite type on the lower electrode, and performing a heat treatment of the dispersion liquid after coating.

REFERENCES:
patent: 6740532 (2004-05-01), Fujimori
patent: 2004/0121492 (2004-06-01), Lee et al.
patent: 62-148213 (1987-07-01), None
patent: 05-047587 (1993-02-01), None
patent: 05-082801 (1993-04-01), None
patent: 07-226485 (1995-08-01), None
patent: 09-139480 (1997-05-01), None
patent: 2001-053071 (2001-02-01), None
patent: 2003-060168 (2003-02-01), None
patent: 2003-086584 (2003-03-01), None
patent: 2003-297823 (2003-10-01), None
Communication from Japanese Patent Office regarding counterpart application, (J0105704).

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