Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2007-02-13
2007-02-13
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S003000, C438S240000, C438S381000, C438S396000, C438S782000, C438S785000, C257SE21009
Reexamination Certificate
active
11046654
ABSTRACT:
A method is provided for manufacturing a capacitor including the steps of forming a lower electrode on a substrate, forming an insulation film formed of a perovskite type metal oxide on the lower electrode, and forming an upper electrode on the insulation film. The step of forming the insulation film includes the steps of coating a dispersion liquid in which fine crystal powder of a second metal oxide of a perovskite type in a liquid containing a precursor compound of a first metal oxide of a perovskite type on the lower electrode, and performing a heat treatment of the dispersion liquid after coating.
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Communication from Japanese Patent Office regarding counterpart application, (J0105704).
Fourson George R.
Harness & Dickey & Pierce P.L.C.
Maldonado Julio J.
Seiko Epson Corporation
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