Capacitor and its manufacturing method

Details Capacitor and its manufacturing method Capacitor and its manufacturing method

2007-01-24

2009-06-16

Thomas, Eric (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C029S025420, C310S354000, C438S003000, C438S240000

Reexamination Certificate

active

07548408

ABSTRACT:
A method for manufacturing a capacitor includes the steps of: forming a conductive layer above a base substrate; forming a dielectric layer above the conductive layer; forming a lanthanum nickelate layer above the dielectric layer; and patterning at least the dielectric layer by using at least the lanthanum nickelate layer as a mask.

REFERENCES:
patent: 5798903 (1998-08-01), Dhote et al.
patent: 6635498 (2003-10-01), Summerfelt et al.
patent: 6649954 (2003-11-01), Cross
patent: 7291960 (2007-11-01), Iwashita et al.
patent: 2003/0062553 (2003-04-01), Ramesh et al.
patent: 2006/0273366 (2006-12-01), Ko et al.
patent: 11-354510 (1999-12-01), None
“Effect of textured LaNiO3 electrode on teh fatigue improvement of Pb(Zr0.53Ti0.47) thin films”, Ming-Sen Chen, Tai-Bor Wu and Jenn-Ming Wu, 1996 American Institute of Physics, Appl. Phys. Lett. 68 (10), Mar. 4, 1996 (pp. 1430-1432).
“Low-Temperature growth of epitaxial LaNiO3/Pb(Zr0.52Ti0.48)O3/LaNiO3 on Si(001) by pulsed-laser deposition”, Webin Wu, K.H. Wong and C.L. Choy, 2000 American Vacuum Society, J. Vac. Sci. Technol.A 18(1), Jan./Feb. 2000, (pp. 79-82).
Lanthanum Nickel oxide GFS—Chemicals.

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