Capacitively coupled array of photodetectors

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307311, 357 24, 357 30, 250338, 250370, G11C 1928, H01L 2978, H01L 2714, H01L 3100

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active

041974697

ABSTRACT:
A plurality of metal deposits are formed on the insulated surface of a semiconductive material to create an array of capacitive photodetectors. A plurality of metal columns connect the metal deposit of each photodetector to a corresponding metal deposit on the insulated surface of a silicon charge-coupled device (CCD). In this manner, the voltage signal generated in each photodetector is capacitively coupled to the charge-coupled device. The metal deposit on the CCD forms a gate for a fill/spill circuit which provides the input to the charge-coupled device. In a preferred embodiment, a bi-polar fill/spill circuit is used to provide an input to the CCD which is proportional to the change in voltage of a photodetector during a predetermined clocking period.

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Emmons et al., "A CCD Multiplexer with Forty AC Coupled Inputs", Int. Conf. Application Charge-Coupled Devices, San Diego (10/75), Prec. pp. 43-52.

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