Capacitive vertical silicon bulk acoustic resonator

Details Capacitive vertical silicon bulk acoustic resonator Capacitive vertical silicon bulk acoustic resonator

2007-02-13

2007-02-13

Summons, Barbara (Department: 2817)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S188000, C333S200000

Reexamination Certificate

active

11208818

ABSTRACT:
Disclosed are high frequency, vertical silicon bulk acoustic resonators. Resonator structures having a relatively large transduction areas fabricated using a HARPSS fabrication process provide for high frequency capacitive resonators with significantly low impedance values. Impedance values as low as a few kilo-Ohms to sub-kilo-Ohm and quality factors in the range of 20,000 to 90,000 in the VHF range have been achieved for a first thickness mode of fabricated vertical silicon bulk acoustic resonators. Resonant frequencies as high as 983 MHz have been demonstrated for higher third thickness modes of the vertical silicon bulk acoustic resonators.

REFERENCES:
patent: 5976994 (1999-11-01), Nguyen et al.
patent: 6238946 (2001-05-01), Ziegler
patent: 6600389 (2003-07-01), Ma et al.
patent: 6707351 (2004-03-01), Gorrell
patent: 2005/0195050 (2005-09-01), Lutz et al.
patent: 2005/0242904 (2005-11-01), Lutz et al.
Masanori Ueda, et al., “Ultra-miniaturized and high performance PCS SAW duplexer with steep cut-off filters”, MTT-S 2004, vol. 2, pp. 913-916, Jun. 2004.
R. C. Ruby, et al, “Thin film bulk wave acoustic resonators (FBAR) for wireless applications”, Ultrasonics Symposium, Oct. 2001, vol. 1, pp. 813-821.
S. Li, et al, “Micromechanical hollow disk ring resonators”, MEMS 2004, pp. 821-824.
S. Pourkamali and F. Ayazi, “SOI-based HF and VHF single—crystal silicon resonators with sub-100nm nanometer vertical capacitive gaps”, Transducers '03, pp. 837-840, The 12thInternational Conf. on Solid State Sensors, Actuators and Microsystems, Boston, Jun. 8-12, 2003.
S. Pourkamali, et al, “VHF single crystal silicon capacitive elliptic bulk-mode disk resonators part II: implementation and characterization”, JMEMS, vol. 13, No. 6, Dec. 2004.
S. Pourkamali and F. Ayazi, “High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology”, proceedings, 5th Silicon RF topical meeting 2004, pp. 147-150.
A. San Paulo et al., Atomic Force Microscopy Characterization of Electromechanical Properties of RF Acoustic Bulk Wave Resonators, MEMS 2004, pp. 169-172.
Siavash Pourkamali et al., “High-Q Single Crystal Silicon HARPSS Capacitive Beam Resonators With Self-Aligned Sub-100-nm Transduction Gaps”, Journal of Microelectromechanical Systems, vol. 12, No. 4, Aug. 2003, pp. 487.
J. D. Larson, et al, “Power handling and temperature coefficient studies in FBAR duplexers for the 1900 MHz PCS band”, Ultrasonics Symposium, Oct. 2000, vol. 1, pp. 869-874.

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