Capacitive single-electron transistor

Details Capacitive single-electron transistor Capacitive single-electron transistor

2005-07-18

2009-06-23

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C324S157000, C324S1540PB

Reexamination Certificate

active

07550759

ABSTRACT:
The invention is a sensitive measuring instrument, which is principally applied to quantum computation, especially to measurement of quantum bits consisting of superconducting micro and nano-structures. The state of a quantum bit is expressed as the voltage-time integral over a circuit component. Phase measurement is performed by measuring the capacitance of a single-electron transistor between the gate and ground.

REFERENCES:
patent: 6353330 (2002-03-01), Kanda et al.
patent: 6605822 (2003-08-01), Blais
patent: 2002/0188578 (2002-12-01), Amin
patent: 2003/0207766 (2003-11-01), Esteve
patent: 2004/0012407 (2004-01-01), Amin

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