Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2002-09-03
2004-02-10
Reichard, Dean A. (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S305000, C361S281000, C361S283100, C361S283400, C361S286000
Reexamination Certificate
active
06690569
ABSTRACT:
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims the priority of Swiss patent application 2251/99, filed Dec. 8, 1999, the disclosure of which is incorporated herein by reference in its entirety.
BACKGROUND
The invention relates to a sensor according to the preamble of claim 1 as well as a method for producing such a sensor.
STATE OF THE ART
Typical examples for sensors of this type are humidity sensors. These comprise a polymer or ceramic layer, which lies on two interdigital electrodes. The dielectric constant of the polymer layer and therefore also the electric capacity between the two electrodes depends on the humidity content of the environmental air. Hence, the humidity content can be determined by means of a capacitive measurement.
In practice it is found, however, that sensors of this type are subject to aging. The signal of a constant parameter to be measured changes over time. This makes later recalibrations necessary and can make the sensors useless.
BRIEF SUMMARY OF THE INVENTION
Hence, it is an object of the invention to provide a sensor of the type mentioned initially that is subject as little as possible to the aging processes mentioned above.
This object is achieved by the sensor of claim 1.
According to the invention, a protective layer of a gas proof, non-oxidizing material is arranged between the electrodes and the measuring layer. As it is found, this reduces or even prevents aging processes. It is assumed that the protective layer prevents an oxidation of the electrodes.
The invention is especially effective with electrodes of aluminum or electrodes of another material that is oxidized easily, such as copper, titanium, tungsten or polysilicon. Aluminum is, however, especially preferred because it is suited for production on semiconductor chips using lithographic methods.
The protective layer can consist of a noble metal, such as gold, or a non-oxidizing dielectric, in particular silicon oxide or silicon nitride. Noble metals and in particular gold have the advantage that they are suited for selective galvanic deposition on the electrodes. For a particularly good sealing, combined layers of gold and a nonoxidizing dielectric deposited thereon are possible as well.
In a preferred embodiment the sensor consists of a semiconductor chip in which an opening is arranged. The opening is spanned by a membrane and the measuring layer is arranged at the membrane. This allows a better control of the temperature of the measuring layer, in particular if a suited heating element is provided. Preferably, the measuring layer is arranged at the inner side of the membrane such that the outer side and therefore the circuit side of the semiconductor chip can be separated from the medium to be measured.
The invention is especially suited for humidity sensors, gas sensors, etc.
REFERENCES:
patent: 4347550 (1982-08-01), Rockliff
patent: 4429343 (1984-01-01), Freud
patent: 4564882 (1986-01-01), Baxter et al.
patent: 5707148 (1998-01-01), Visser et al.
patent: 5719740 (1998-02-01), Hayashi et al.
patent: 5837886 (1998-11-01), Nakahara et al.
patent: 5840255 (1998-11-01), Kappel et al.
patent: 5989398 (1999-11-01), Young et al.
patent: 6191593 (2001-02-01), Tartagni et al.
patent: 6252759 (2001-06-01), Lange et al.
patent: 6265222 (2001-07-01), DiMeo, Jr. et al.
patent: 6326228 (2001-12-01), Hughes et al.
patent: 6452514 (2002-09-01), Philipp
patent: 3923595 (1990-12-01), None
patent: 19708053 (1998-09-01), None
patent: 668196 (1952-03-01), None
patent: 2159956 (1985-12-01), None
patent: WO8504718 (1985-10-01), None
“Silicon Sensors,” S. Middlehoek and S.A. Audet, Delft University Press, 1994, pp. 230-265.
“The Long-Term Reliability of a Switched-Capacitor Relative Humidity Sensor System,” M.A.S. Jaafar et al., Sensors and Materials 3, 2 (1991), pp. 111-125.
Lechner Moritz
Mayer Felix
Cooper & Dunham LLP
Dowden Donald S.
Nguyen T. Ha
Reichard Dean A.
Sensirion A/G
LandOfFree
Capacitive sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitive sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitive sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3325646