Capacitive pressure transducer

Electricity: electrical systems and devices – Electrostatic capacitors – Variable

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357 26, 361278, H01G 700

Patent

active

043320007

ABSTRACT:
An integrated semiconductor pressure transducer comprises a central conducting diaphragm located between two frusto-pyramidal recesses defined by contiguous semiconductor body members of conductivity type different from that of the diaphragm. A metal membrane with communicating apertures subtends one cavity and forms a relatively fixed plate of a capacitor, the other plate of which is formed by the diaphragm. A method of making the transducer in semiconductor process steps includes provisions for normal integrated circuit device fabrication whereby a transducer and utilization circuitry are fabricated in the same process into a single integrated semiconductor device.

REFERENCES:
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patent: 3634727 (1972-01-01), Polye
patent: 3748571 (1973-07-01), Kurtz
patent: 3758830 (1973-09-01), Jackson
patent: 3853650 (1974-12-01), Hartlaub
patent: 3938175 (1976-02-01), Jaffe et al.
patent: 3994009 (1976-11-01), Hartlaub
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4021766 (1977-05-01), Aine
patent: 4064550 (1977-12-01), Dias
patent: 4261086 (1981-04-01), Giachino

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