Capacitive pressure sensor having a reduced area dielectric spac

Electricity: electrical systems and devices – Electrostatic capacitors – Variable

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73718, H01G 700

Patent

active

054484448

ABSTRACT:
A silicon capacitive pressure sensor is disclosed that has a glass dielectric material sputter-deposited onto a silicon substrate of the sensor. After deposition of the bulk dielectric material, the glass is patterned and etched to form a pair of concentric rings. An inner ring is of a circular shape, while the outer ring is of an octagonal shape. As compared to prior art dielectric spacers which are of a single ring of relatively wide thickness, the pair of concentric rings disclosed herein significantly reduce the parasitic capacitance of the glass dielectric material, thereby increasing the sensitivity of the sensor.

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