Capacitive pressure sensor

Details Capacitive pressure sensor Capacitive pressure sensor

2007-03-20

2007-03-20

Thompson, Jewel (Department: 2855)

Measuring and testing

Fluid pressure gauge

Diaphragm

Reexamination Certificate

active

11107510

ABSTRACT:
A capacitive pressure sensor made up of two silicon on insulator (SOI) wafers lying opposite of each other and joined to each other in a vacuum-tight manner, a recess being formed between the two wafers. The first wafer exclusively supports the evaluation circuits required for measuring the applied pressure and a capacitive electrode, and the second wafer has a recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated. The second wafer at the same time forms a cover for the first wafer.

REFERENCES:
patent: 6341527 (2002-01-01), Ishikura et al.
patent: 6382030 (2002-05-01), Kihara et al.
patent: 6968744 (2005-11-01), Silverbrook et al.

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