Capacitive microaccelerometers and fabrication methods

Details Capacitive microaccelerometers and fabrication methods Capacitive microaccelerometers and fabrication methods

2008-03-04

2008-03-04

Kwok, Helen (Department: 2856)

Measuring and testing

Speed, velocity, or acceleration

Acceleration determination utilizing inertial element

Reexamination Certificate

active

07337671

ABSTRACT:
Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (<200 ng/√Hz) and very high sensitivity (>17 pF/g). The microstructures are fabricated in thick (>100 μm) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is −91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/√Hz). The IC consumes 6 mW power and measures 0.65 mm2core area.

REFERENCES:
patent: 6117701 (2000-09-01), Buchan et al.
patent: 6389899 (2002-05-01), Partridge et al.
patent: 7043985 (2006-05-01), Ayazi et al.
patent: 7109727 (2006-09-01), Hayakawa et al.

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