Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-01-30
2007-01-30
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S296000, C257S532000, C257S774000
Reexamination Certificate
active
11123831
ABSTRACT:
A capacitive structure is provided that includes secondary stacks of superposed secondary electrodes that each include transverse branches connected via a longitudinal branch, means for connecting the superposed secondary electrodes of each of the stacks, first and second means for successively and alternately connecting so as to constitute a first secondary group of secondary stacks and a second secondary group of secondary stacks, at least two principal stacks of superposed principal electrodes which each include transverse branches that are connected via a longitudinal branch such that the transverse branches of the principal electrodes and the transverse branches of the secondary electrodes of the rows extend opposite one another and between one another in an alternating fashion, means for connecting the superposed principal electrodes of each of the principal stacks, and means for connecting the principal stacks so as to constitute a group of stacks of principal electrodes.
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French Preliminary Search Report dated Sep. 21, 2004 for French Application No. 04 04992.
Bely Mickaël
Boulemnakher Mounir
Noblanc Olivier
Bongini Stephen
Fenty Jesse A.
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Jorgenson Lisa K.
Parker Kenneth
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