Measuring and testing – Gas analysis – Moisture content or vapor pressure
Reexamination Certificate
2005-11-03
2008-10-07
Williams, Hezron E. (Department: 2856)
Measuring and testing
Gas analysis
Moisture content or vapor pressure
C073S023200
Reexamination Certificate
active
07430904
ABSTRACT:
A capacitive humidity sensor includes a semiconductor substrate, a protective layer and a humidity sensitive section including a pair of comb electrodes and a humidity sensitive layer having a dielectric constant, which changes in accordance with humidity. The comb electrodes are disposed on one surface of the semiconductor substrate through the protective layer to face each other with a predetermined gap. An interface between the protective layer and the humidity sensitive layer is planarized so that the sensor prevents a hysteresis in a variation of capacitance. For example, a surface of the protective layer can be made flat by polishing.
REFERENCES:
patent: 5050434 (1991-09-01), Demisch
patent: 6580600 (2003-06-01), Toyoda et al.
patent: 2002/0114125 (2002-08-01), Toyoda et al.
patent: 2002/0142478 (2002-10-01), Wado et al.
patent: 2003/0179805 (2003-09-01), Hamamoto et al.
patent: 01156655 (1989-06-01), None
patent: 20002005867 (2002-01-01), None
Isogai Toshiki
Itakura Toshikazu
DENSO CORPORATION
Frank Rodney T
Nippon Soken Inc.
Posz Law Group , PLC
Williams Hezron E.
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