Capacitive element, method of manufacture of the same, and...

Details Capacitive element, method of manufacture of the same, and... Capacitive element, method of manufacture of the same, and...

2006-10-17

2008-10-21

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making metal-insulator-metal device

C361S305000, C361S303000, C361S311000, C361S313000, C361S306300, C029S025420, C257S924000, C257SE23057, C257S532000

Reexamination Certificate

active

07439199

ABSTRACT:
A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

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International Search Report of PCT/JP2004/010132 date of mailing Oct. 26, 2004.

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