Capacitive element and semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S295000

Reexamination Certificate

active

07015564

ABSTRACT:
A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.

REFERENCES:
patent: 5790366 (1998-08-01), Desu et al.
patent: 5852307 (1998-12-01), Aoyama et al.
patent: 6180974 (2001-01-01), Okutoh et al.
patent: 6339008 (2002-01-01), Takenaka
patent: 6521927 (2003-02-01), Hidaka et al.
patent: 6815223 (2004-11-01), Celinska et al.
patent: 6880920 (2005-04-01), Murai
patent: 2004/0130026 (2004-07-01), Imai et al.
patent: 2004/0248360 (2004-12-01), Ohashi et al.
patent: 2005/0136555 (2005-06-01), Wang
patent: 2001-53250 (2001-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Capacitive element and semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitive element and semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitive element and semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3585925

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.