Capacitive element and semiconductor memory device

Details Capacitive element and semiconductor memory device Capacitive element and semiconductor memory device

2006-03-21

2006-03-21

Clark, S. V. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S295000

Reexamination Certificate

active

07015564

ABSTRACT:
A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.

REFERENCES:
patent: 5790366 (1998-08-01), Desu et al.
patent: 5852307 (1998-12-01), Aoyama et al.
patent: 6180974 (2001-01-01), Okutoh et al.
patent: 6339008 (2002-01-01), Takenaka
patent: 6521927 (2003-02-01), Hidaka et al.
patent: 6815223 (2004-11-01), Celinska et al.
patent: 6880920 (2005-04-01), Murai
patent: 2004/0130026 (2004-07-01), Imai et al.
patent: 2004/0248360 (2004-12-01), Ohashi et al.
patent: 2005/0136555 (2005-06-01), Wang
patent: 2001-53250 (2001-02-01), None

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