Capacitive coupling

Details Capacitive coupling Capacitive coupling

1987-08-04

1989-03-14

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 51, 357 59, 365185, H01L 2978

Patent

active

048128856

ABSTRACT:
An upstanding sidewall conductor (38) is formed in a via (30) that is made in a thick oxide layer (28) to expose a polysilicon gate electrode (22). A thin insulator layer (42) is deposited over the sidewall conductor layer (38) and a central region (32) of the polysilicon electrode (22). A second conductive layer (44) is deposited in the via (30) so as to be in registry with the upstanding sidewall conductor (38) and the central region (32) of the polysilicon electrode (22). In this way, the capacitive coupling between electrode (22) and electrode (44) is enhanced.

REFERENCES:
patent: 4326331 (1982-04-01), Guterman
patent: 4377857 (1983-03-01), Tickle
patent: 4451904 (1984-05-01), Sugiura et al.
patent: 4754320 (1988-06-01), Mizutani
patent: 4769786 (1988-09-01), Garnache

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