Capacitive charge pump, BiCMOS circuit for low supply voltage an

Details Capacitive charge pump, BiCMOS circuit for low supply voltage an Capacitive charge pump, BiCMOS circuit for low supply voltage an

1995-05-31

1996-12-03

Nguyen, Matthew V.

Electric power conversion systems

Current conversion

With voltage multiplication means

327536, H02M 700

Patent

active

055814557

ABSTRACT:
A BiCMOS capacitive charge pump circuit for low supply voltage has a bipolar part, functionally reproducing a basic charge pump circuit and a CMOS part that comprises MOS transistors functionally connected in parallel with the driving switch toward ground potential of the charge transfer capacitance and in parallel with the output diode for substantially nullifying voltage drops on the respective bipolar components. A special driving circuit (T8, R2, I2), powered at the boosted output voltage (VOUT) responds to the rise of the voltage on the output node above a minimum level, as ensured by the bipolar part of the charge pump circuit, to drive said MOS transistors (M1, M2), thus allowing the output voltage to reach a level that is substantially double the supply voltage (Vs), even when the latter is exceptionally low, for reliably ensuring switching of the CMOS part of the circuit.

REFERENCES:
patent: 4727465 (1988-02-01), Cini et al.
patent: 4733159 (1988-03-01), Edwards et al.
patent: 5111375 (1992-05-01), Marshall
patent: 5179296 (1993-01-01), Ito
patent: 5436821 (1995-07-01), Inoue
patent: 5465061 (1995-11-01), Dufour
patent: 5493543 (1996-02-01), Kamens
H. Webb, "Voltage Multiplication and Division Employing Active Switching" Motorola Technical Developments, vol. 12, p. 133 (1991).

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