Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2008-07-01
2008-07-01
Chen, Jack (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S417000
Reexamination Certificate
active
10848285
ABSTRACT:
A capacitance-type dynamic-quantity sensor has a silicon substrate having etched recessed upper and lower surface portions forming a weight supported by beam portions and mounted to undergo displacement due to an applied external dynamic quantity such as acceleration or angular velocity. An upper glass substrate is bonded to a part of the upper surface of the silicon substrate and is laminated with a first fixed electrode disposed opposite to and spaced apart from the weight with a first space therebetween formed by the etched recessed upper surface portion of the silicon substrate. A lower glass substrate is bonded to a part of the lower surface of the silicon substrate and is laminated with a second fixed electrode disposed opposite to and spaced apart from the weight with a second space therebetween formed by the etched recessed lower surface portion of the silicon substrate.
REFERENCES:
patent: 08-094666 (1996-04-01), None
Katou Kenji
Sudou Minoru
Yarita Hitsuo
Adams & Wilks
Chen Jack
Seiko Instruments Inc.
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