Capacitance modeling

Data processing: structural design – modeling – simulation – and em – Modeling by mathematical expression

Reexamination Certificate

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C703S017000, C716S030000, C716S030000

Reexamination Certificate

active

08041546

ABSTRACT:
A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (ε1) and the substrate is a second dielectric with a second permittivity (ε2). The method models the capacitance (C1) for values of the first and second permittivity (ε1, ε2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (ε1) and a different second permittivity (ε2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).

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patent: 6291254 (2001-09-01), Chou et al.
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patent: 2008/0244485 (2008-10-01), Gordin et al.
Office Action dated Feb. 9, 2011 from U.S. Appl. No. 12/137,277.

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