Capacitance-forming method

Semiconductor device manufacturing: process – Making passive device – Planar capacitor

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Details

438129, H01L 218242

Patent

active

060402288

ABSTRACT:
The present invention reduces the circuit area of a semiconductor system including a capacitance. To realize it, a unit capacitor electrode conductor is curved to detour a metal terminal head portion used for common electrode, the metal terminal head portion for a common electrode is chamfered, or the cyclic position of a row of adjacent unit capacitor electrodes is shifted.

REFERENCES:
patent: 4949305 (1990-08-01), Toyama et al.
patent: 5457064 (1995-10-01), Lee
patent: 5744385 (1998-04-01), Hojabri

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