Capacitance diode with particular doping profile

Details Capacitance diode with particular doping profile Capacitance diode with particular doping profile

1979-07-23

1981-02-10

Clawson, Jr., Joseph E.

357 51, 357 90, H01L 2992

Patent

active

042505143

ABSTRACT:
A capacitance diode includes an epitaxial layer of a first conductivity type provided on a substrate in which a doping profile is formed in the epitaxial layer by controlled doping during the epitaxial layer growth, and a surface zone of the second conductivity type which forms a p-n junction with the epitaxial layer. According to the invention, the doping profile in the epitaxial layer varies according to the equation ##EQU1## wherein x is the distance from the p-n junction in .mu.m, x.sub.o is the width of the barrier layer in .mu.m at a voltage -U.sub.D across the p-n junction, U.sub.D is the diffusion voltage of the p-n junction, and k, n and .beta. are constants. As a result of this doping profile, a very low frequency deviation is obtained which does not change sign.

REFERENCES:
patent: 3906539 (1975-09-01), Sauermann et al.
patent: 4106953 (1978-08-01), Onondera

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