Capacitance detection type sensor and manufacturing method...

Details Capacitance detection type sensor and manufacturing method... Capacitance detection type sensor and manufacturing method...

2006-03-07

2006-03-07

Nguyen, Vincent Q. (Department: 2858)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

C324S658000, C324S663000, C324S686000

Reexamination Certificate

active

07009410

ABSTRACT:
Capacitance sensor electrodes are arranged in a form of matrix on a semiconductor substrate and coated with a cover film. These capacitance sensor electrodes are connected to a drive circuit. ESD electrodes are arranged in the vicinities of corner portions of the capacitance sensor electrodes. Each ESD electrode is composed of a film containing, for example, aluminum excellent in conductivity and a TiN film formed thereon. The ESD electrodes are grounded through the semiconductor substrate. On each ESD electrode, a plurality of fine ESD holes reaching the ESD electrode from a surface of the cover film are formed.

REFERENCES:
patent: 5328553 (1994-07-01), Poon
patent: 6114862 (2000-09-01), Tartagni et al.
patent: 6478976 (2002-11-01), Lepert et al.
patent: 6483931 (2002-11-01), Kalnitsky et al.
patent: 6515488 (2003-02-01), Thomas

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