Static information storage and retrieval – Read only systems
Patent
1980-11-28
1982-12-07
Fears, Terrell W.
Static information storage and retrieval
Read only systems
365185, 365218, 357 23, G11C 1140
Patent
active
043631096
ABSTRACT:
An electrically programmable and erasable IGFET nonvolatile memory unit, and method for writing/erasing information in it. The IGFET memory unit has two pairs of floating and control gates, with one pair dispersed over the IGFET channel and the other pair disposed over an adjacent memory control region. Applying a voltage to the IGFET control gate and the memory control region, while maintaining the IGFET source and other control gate at zero potential charges the floating gates. Reducing the memory control region to zero potential removes that charge.
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Applied Physics Letters Oct, 1977 "A New Approach for the Floating-Gate MOS Nonvolatile Memory", H. S. Lee, v. 31 pp. 475-476.
Proceedings of the IEEE Jul. 1976, "Nonvolatile Semiconductor Memory Devices" J. J. Chany vol. 64 No. 7 pp. 1039-1059.
Fears Terrell W.
General Motors Corporation
Wallace Robert J.
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